Arpad Kosa, Lubica Stuchlikova, Ladislav Harmatha, Jaroslav Kovac, Beata Sciana, Wojciech Dawidowski, Marek Tłaczała, DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions, Materials Science in Semiconductor Processing, Volume 74, February 2018, Pages 313-318, https://doi.org/10.1016/j.mssp.2017.10.035

M.C. López-Escalante, B. Ściana, W. Dawidowski, K. Bielak, M. Gabás, Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques, Applied Surface Science (2018), vol. 433, s. 1-9, https://doi.org/10.1016/j.apsusc.2017.10.032

A. Stafiniak, T. Szymański, R. Paszkiewicz, Self-organization of palladium nanoislands on GaN and AlxGa1-xN/GaN heterostructures, Applied Surface Science (2017), vol. 426, s. 123-132, http://dx.doi.org/10.1016/j.apsusc.2017.07.213

K. Mistewicz, M. Nowak, R. Paszkiewicz, A. Guiseppi-Elie, SbSI nanosensors: from gel to single nanowire devices, Nanoscale Research Letters (2017), s. 1-8, http://dx.doi.org/10.1186/s11671-017-1854-x

R. Korbutowicz, A. Zakrzewski, O. Rac-Rumijowska, A. Stafiniak, A. Vincze, Oxidation rates of aluminium nitride thin films: effect of composition of the atmosphere, Journal of Materials Science, Materials in Electronics (2017), s. 1-13, http://dx.doi.org/10.1007/s10854-017-7243-5

A. Szyszka, W. Dawidowski, A. Stafiniak, J. Prażmowska-Czajka, B. Ściana, M. Tłaczała, Cross-sectional scanning capacitance microscopy characterization of GaAs based solar cell structures, Crystal Research and Technology (2017), vol. 52, nr 6, art. 1700019, s. 1-5, http://dx.doi.org/10.1002/crat.201700019

B. K. Paszkiewicz, Stress and induced electric polarization modeling in polar, semi-polar, and non-polar AlGaN/GaN heterostructures for piezotronics application, Advanced Engineering Materials (2017), s. 1-8, http://dx.doi.org/10.1002/adem.201600712

A. Wiatrowski, W. Kijaszek, W. Posadowski, W. Oleszkiewicz, J. Jadczak, P. Kunicki, Deposition of diamond-like carbon thin films by the high power impulse magnetron sputtering method, Diamond and Related Materials (2017), vol. 72, s. 71-76, http://dx.doi.org/10.1016/j.diamond.2017.01.007

D. Pudiš, M. Goraus, M. Tłaczała, P. Gašo, J. Kováč, W. Dawidowski, D. Jandura, Ľ. Šušlik, J. Ďurišová, I. Lettrichová, B. Ściana, Polymer based 3D photonic crystals applied on the surface of LEDs and photodiodes, Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 102490S (30 May 2017), doi: http://dx.doi.org/10.1117/12.2265759 

W. Prochowicz, W. Macherzyński, B. Paszkiewicz, Z. Stępień, Effect of surface coating with palladium on hydrogen permeability of Pd33Ni52Si15 amorphous alloy membrane, Optica Applicata (2016), vol. 46, nr 2, s. 173-179, http://dx.doi.org/10.5277/oa160202

M. Drab, J. Krajniak, K. Grzelakowski, The new methodology and chemical contrast observation by use of the energy-selective back-scattered electron detector, Microscopy and Microanalysis (2016), vol. 22, nr 6, s. 1369-1373, https://doi.org/10.1017/S1431927616012514

Ł. Gelczuk, M. Dąbrowska-Szata, B. Ściana, D. Pucicki, D. Radziewicz, K. Kopalko, M. Tłaczała, Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE, Materials Science-Poland (2016), vol. 34, nr 4, s. 726-734, https://doi.org/10.1515/msp-2016-0126

W. Kijaszek, W. Oleszkiewicz, A. Zakrzewski, S. Patela, M. Tłaczała, Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method, Materials Science-Poland (2016), vol. 34, nr 4, s. 868-871, https://doi.org/10.1515/msp-2016-0111

A. Szyszka, M. Obłąk, T. Szymański, M. Wośko, W. Dawidowski, R. Paszkiewicz, Scanning capacitance microscopy characterization of AIIIBV epitaxial layers, Materials Science-Poland (2016), vol. 34, nr 4, s. 845-850, http://dx.doi.org/10.1515/msp-2016-0104

M. Wośko, B. Paszkiewicz, T. Szymański, R. Paszkiewicz, Comparison of electrical, optical and structural properties of epitaxially grown HEMT's type AlGaN/AlN/GaN heterostructures on Al2O3, Si and SiC substrates, Superlattices and Microstructures (2016), vol. 100, s. 619-626, http://dx.doi.org/10.1016/j.spmi.2016.10.017

K. Mistewicz, M. Nowak, D. Stróż, R. Paszkiewicz, SbSI nanowires for ferroelectric generators operating under shock pressure, Materials Letters (2016), vol. 180, s. 15-18, http://dx.doi.org/10.1016/j.matlet.2016.05.093

T. Szymański, M. Wośko, M. Wzorek, B. Paszkiewicz, R. Paszkiewicz, Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal-organic vapour phase epitaxy, CrystEngComm (2016), vol. 18, nr 45, s. 8747-8755, http://dx.doi.org/10.1039/C6CE01804A

A. Kosa, M. Mikolášek, L. Stuchlíková, L. Harmatha, W. Dawidowski, B. Ściana, M. Tłaczała, Electrophysical properties of GaAs p-i-n structures for concentrator solar cell applications, Journal of Electrical Engineering-Elektrotechnický Časopis (2016), vol. 67, nr 5, s. 377-382, http://dx.doi.org/10.1515/jee-2016-005

Ł. Kosior, D. Radziewicz, I. Zborowska-Lindert, A. Stafiniak, M. Badura, B. Ściana, Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates, Materials Science-Poland (2016), vol. 34, nr 4, s. 872-880,  https://doi.org/10.1515/msp-2016-0103

K. Indykiewicz, R. Paszkiewicz, B. Paszkiewicz, Improvement of the electron beam lithography contact pads fabrication process, Optica Applicata (2016), vol. 46, nr 2, s. 249-254, http://dx.doi.org/10.5277/oa160209

A. Szyszka, M. Wośko, T. Szymański, R. Paszkiewicz, Surface topography analysis with application of roughness area dependence method, Ultramicroscopy (2016), vol. 170, s. 77-85, http://dx.doi.org/10.1016/j.ultramic.2016.07.017

W. Kijaszek, W. Oleszkiewicz, Optimization of radio frequency inductively coupled plasma enhanced chemical vapour deposition process of diamond-like carbon films, Optica Applicata (2016), vol. 46, nr 2, s. 167-172, http://dx.doi.org/10.5277/oa160201 

D. Pucicki, K. Bielak, W. Dawidowski, B. Ściana, M. Tłaczała, Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures, Optica Applicata (2016), vol. 46, nr 2, s. 255-263, http://dx.doi.org/10.5277/oa160210 

M. Badura, K. Bielak, B. Ściana, D. Radziewicz, D. Pucicki, W. Dawidowski, K. Żelazna, R. Kudrawiec, M. Tłaczała, Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications, Optica Applicata (2016), vol. 46, nr 2, s. 241-248, http://dx.doi.org/10.5277/oa160208

T. Szymański, M. Wośko, B. K. Paszkiewicz, B. Paszkiewicz, R. Paszkiewicz, I. Sankowska, Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy, Journal of Vacuum Science & Technology. A, Vacuum, Surfaces and Films (2016), vol. 35, nr 5, art. 051504, s. 1-8, http://dx.doi.org/10.1116/1.4958805

W. Macherzyński, A. Stafiniak, B. Paszkiewicz, J. Gryglewicz, R. Paszkiewicz, Microanalysis of the Ti/Al and Ti/Al/Mo/Au ohmic contacts metallization to AlGaN/GaN heterostructures, Physica Status Solidi. A, Applications and Materials Science (2016), vol. 213, nr 5, s. 1145-1149, http://dx.doi.org/10.1002/pssa.201532684

B. K. Paszkiewicz, T. Szymański, M. Tłaczała, Theoretical stress calculations in polar, semipolar and nonpolar AlGaN/GaN heterostructures of different compositions, Crystal Research and Technology (2016), vol. 51, nr 5, s. 349-353, http://dx.doi.org/10.1002/crat.201600018

M. Dyksik, M. Motyka, W. Rudno-Rudziński, G. Sęk, J. Misiewicz, D. Pucicki, K. Kosiel, I. Sankowska, J. Kubacka-Traczyk, M. Bugajski, Optical properties of active regions in terahertz quantum cascade lasers, Journal of Infrared, Millimeter, and Terahertz Waves (2016), vol. 37, nr 7, s. 710-719, http://dx.doi.org/10.1007/s10762-016-0259-8

B. Ściana, M. Badura, W. Dawidowski, K. Bielak, D. Radziewicz, D. Pucicki, A. Szyszka, K. Żelazna, M. Tłaczała, LP-MOVPE growth of high Si-doped InGaAs contact layer for quantum cascade laser applications, Opto-Electronics Review (2016), vol. 24, nr 2, s. 95-102, http://dx.doi.org/10.1515/oere-2016-0013

R. Korbutowicz, A. Zakrzewski, Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones, Materials Science-Poland (2016), vol. 34, nr 1, s. 157-163, http://dx.doi.org/10.1515/msp-2016-0010

A. Kósa, L. Stuchlíková, L. Harmatha, M. Mikolášek, J. Kováč, B. Ściana, W. Dawidowski, D. Radziewicz, M. Tłaczała, Defect distribution in InGaAsN/GaAs multilayer solar cells, Solar Energy (2016), vol. 132, s. 587-590, http://dx.doi.org/10.1016/j.solener.2016.03.057 

W. Dawidowski, B. Ściana, I. Zborowska-Lindert, M. Mikolášek, K. Bielak, M. Badura, D. Pucicki, D. Radziewicz, J. Kováč, M. Tłaczała, The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I–V characteristics, Solid-State Electronics (2016), vol. 120, s. 13-18, http://dx.doi.org/10.1016/j.sse.2016.03.001

T. Szymański, M. Wośko, B. Paszkiewicz, J. Serafińczuk, M. Drzik, R. Paszkiewicz, Stress control by micropits density variation in strained AlGaN/GaN/SiN/AlN/Si(111) heterostructures, Crystal Research and Technology (2016), vol. 51, nr 3, s. 225-230, http://dx.doi.org/10.1002/crat.201500276

K. Rola, I. Zubel, Effect of molecular structure of alcohols on wet anisotropic etching of silicon, Sensors and Actuators. A, Physical (2016), vol. 242, s. 18-26, http://dx.doi.org/10.1016/j.sna.2016.02.032

A. Stafiniak, M. Tłaczała, The Meyer–Neldel rule in conduction mechanism of the electrospun ZnO nanofibers, NANO: Brief Reports and Reviews (2016), vol. 11, nr 3, s. 1650025-1 - 1650025-5, http://dx.doi.org/10.1142/S1793292016500259

D. Pucicki, K. Bielak, B. Ściana, D. Radziewicz, M. Latkowska-Baranowska, J. Kováč, A. Vincze, M. Tłaczała, Determination of composition of non-homogeneous GaInNAs layers, Journal of Crystal Growth (2016), vol. 433, s. 105-113, http://dx.doi.org/10.1016/j.jcrysgro.2015.10.011

D. Pucicki, K. Bielak, M. Badura, W. Dawidowski, B. Ściana, Influence of GaInNAs/GaAs QWs composition profile on the transitions selection rules, Microelectronic Engineering (2016), vol. 161, s. 13-17, http://dx.doi.org/10.1016/j.mee.2016.03.061

P. Panek, B. Swatowska, W. Dawidowski, M. Juel, P. Zięba, Boron liquid solution deposited by spray method for p-type emitter formation in crystalline Si solar cells, roc. SPIE 10175, Electron Technology Conference 2016, 101750V (22 December 2016), doi: http://dx.doi.org/10.1117/12.2261693 

W. Prochowicz, W. Macherzyński, B. Paszkiewicz, Z. Stępień, Hydrogen permeation properties of Pd-coated Pd33Ni52Si15 amorphous alloy membrane, Materials Science-Poland (2015), vol. 33, nr 1, s. 56-58, http://dx.doi.org/10.1515/msp-2015-0009

J. Macioszczyk, K. Malecha, A. Stafiniak, L. Golonka, Impact of processing parameters on the LTCC channels geometry, Materials Science-Poland (2015), vol. 33, nr 4, s. 816-825, http://dx.doi.org/10.1515/msp-2015-0104

Ł. Gelczuk, D. Pucicki, J. Serafińczuk, M. Dąbrowska-Szata, P. Dłużewski, Anisotropy of strain relaxation in heterogeneous GaInNAs layers grown by AP-MOVPE, Journal of Crystal Growth (2015), vol. 430, s. 14-20, http://dx.doi.org/10.1016/j.jcrysgro.2015.07.036

J. Sotor, G. Soboń, W. Macherzyński, P. Pałetko, K. Abramski, Black phosphorus saturable absorber for ultrashort pulse generation, Applied Physics Letters (2015), vol. 107, nr 5, art. 051108, s. 1-5, http://dx.doi.org/10.1063/1.4927673

J. Sotor, G. Soboń, M. Kowalczyk, W. Macherzyński, P. Pałetko, K. Abramski, Ultrafast thulium-doped fiber laser mode locked with black phosphorus, Optics Letters (2015), vol. 40, nr 16, s. 3885-3888, http://dx.doi.org/10.1364/OL.40.003885

T. Szymański, M. Wośko, B. Paszkiewicz, R. Paszkiewicz, M. Drzik, Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application, Journal of Vacuum Science & Technology. A, Vacuum, Surfaces and Films (2015), vol. 33, nr 4, art. 041506, s. 1-7, http://dx.doi.org/10.1116/1.4921581

M. Wośko, B. Paszkiewicz, A. Vincze, T. Szymański, R. Paszkiewicz, GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111), Physica Status Solidi. B, Basic Solid State Physics (2015), vol. 252, nr 5, s. 1195-1200, http://dx.doi.org/10.1002/pssb.201451596

M. Wośko, B. Paszkiewicz, T. Szymański, R. Paszkiewicz, Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates, Journal of Crystal Growth (2015), vol. 414, s. 248-253,  http://dx.doi.org/10.1016/j.jcrysgro.2014.10.048

K. Mistewicz, M. Nowak, P. Szperlich, M. Jesionek, R. Paszkiewicz, SbSI single nanowires as humidity sensors, Acta Physica Polonica A (2014), vol. 126, nr 5, s. 1113-1114, http://dx.doi.org/10.12693/APhysPolA.126.1113

Ł. Gelczuk, M. Dąbrowska-Szata, D. Pucicki, DLTS investigations of (Ga,In)(N,As)/GaAs quantum wells before and after rapid thermal annealing, Acta Physica Polonica A (2014), vol. 126, nr 5, s. 1195-1198, http://dx.doi.org/10.12693/APhysPolA.126.1195

K. Indykiewicz, B. Paszkiewicz, T. Szymański, R. Paszkiewicz, Electron beam lithography double step exposure technique for fabrication of mushroom-like profile in bilayer resist system, Journal of Electrical Engineering-Elektrotechnický Časopis (2014), vol. 65, nr 6, s. 381-385, http://dx.doi.org/10.2478/jee-2014-0062

A. Szyszka, L. Lupina, G. Lupina, M. Schubert, P. Zaumseil, M. Haeberlen, P. Storck, S. Thapa, T. Schroeder, Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts, Journal of Applied Physics (2014), vol. 116, nr 8, art. 083108, s. 1-9, http://dx.doi.org/10.1063/1.4894251

D. Pucicki, K. Bielak, B. Ściana, W. Dawidowski, K. Żelazna, J. Serafińczuk, J. Kováč, A. Vincze, Ł. Gelczuk, P. Dłużewski, Structural characterization of doped thick GaInNAs layers - ambiguities and challenges, Journal of Electrical Engineering-Elektrotechnický Časopis (2014), vol. 65, nr 5, s. 299-303, http://dx.doi.org/10.2478/jee-2014-0048

A. Kósa, L. Stuchlíková, W. Dawidowski, J. Jakuš, B. Ściana, D. Radziewicz, D. Pucicki, L. Harmatha, J. Kováč, M. Tłaczała, DLTFS investigation of InGaAsN/GaAs tandem solar cell, Journal of Electrical Engineering-Elektrotechnický Časopis (2014), vol. 65, nr 5, s. 271-276, http://dx.doi.org/10.2478/jee-2014-0043

T. Szymański, M. Wośko, B. Paszkiewicz, K. Indykiewicz, R. Paszkiewicz, Correlation of selected problems during GaN MOVPE epitaxy on Si substrates with in-situ interferometer observation, Journal of Electrical Engineering-Elektrotechnický Časopis (2014), vol. 65, nr 5, s. 294-298, http://dx.doi.org/10.2478/jee-2014-0047

M. Gładysiewicz-Kudrawiec, Ł. Janicki, R. Kudrawiec, J. Misiewicz, M. Wośko, R. Paszkiewicz, B. Paszkiewicz, M. Tłaczała, Position of fermi level on Al0.2Ga0.8N surface and distribution of electric field in Al0.2Ga0.8N/GaN heterostructures without and with AlN layer, Journal of Applied Physics (2014), vol. 115, nr 13, art. 133504, s. 1-6, http://dx.doi.org/10.1063/1.4870442

J. Bogusławski, J. Sotor, G. Soboń, J. Tarka, J. Jagiełło, W. Macherzyński, L. Lipińska, K. Abramski, Mode-locked Er-doped fiber laser based on liquid phase exfoliated Sb2Te3 topological insulator, Laser Physics (2014), vol. 24, nr 10, s. 1-6, http://dx.doi.org/10.1088/1054-660X/24/10/105111

D. Nowak, A. Stafiniak, A. Dziedzic, Analysis of electromigration phenomenon in thick-film and LTCC structures at elevated temperature, Materials Science-Poland (2014), vol. 32, nr 2, s. 247-251, http://dx.doi.org/10.2478/s13536-013-0182-9

A. Stafiniak, B. Boratyński, A. Baranowska-Korczyc, K. Fronc, D. Elbaum, M. Tłaczała, Electrical conduction of a single electrospun ZnO nanofiber, Journal of the American Ceramic Society (2014), vol. 97, nr 4, s. 1157-1163, http://dx.doi.org/10.1111/jace.12759

J. Sotor, G. Soboń, W. Macherzyński, K. Abramski, Harmonically mode-locked Er-doped fiber laser based on a Sb2Te3 topological insulator saturable absorber, Laser Physics Letters (2014), vol. 11, nr 5, s. 1-5, http://dx.doi.org/10.1088/1612-2011/11/5/055102

A. Szyszka, L. Lupina, G. Lupina, M. Mazur, M. Schubert, P. Storck, S. Thapa, T. Schroeder, Enhanced ultraviolet GaN photo-detector response on Si(111) via engineered oxide buffers with embedded Y2O3/Si distributed Bragg reflectors, Applied Physics Letters (2014), vol. 104, nr 1, art. 011106, s. 1-5, http://dx.doi.org/10.1063/1.4861000

J. Sotor, G. Soboń, W. Macherzyński, P. Pałetko, K. Grodecki, K. Abramski, Mode-locking in Er-doped fiber laser based on mechanically exfoliated Sb2Te3 saturable absorber, Optical Materials Express  (2014), vol. 4, nr 1, s. 1-6, http://dx.doi.org/10.1364/OME.4.000001

K. Rola, K. Ptasiński, A. Zakrzewski, I. Zubel, Silicon 45° micromirrors fabricated by etching in alkaline solutions with organic additives, Microsystem Technologies: Micro- and Nanosystems - Information Storage and Processing Systems (2014), vol. 20, nr 2, s. 221-226, http://dx.doi.org/10.1007/s00542-013-1859-z

W. Macherzyński, B. Paszkiewicz, Study of interface reactions between Ti/Al/Ni/Au metallization and AlGaN/GaN heterostructures, Central European Journal of Physics (2013), vol. 11, nr 2, s. 258-263, http://dx.doi.org/10.2478/s11534-012-0158-0

K. Mistewicz, M. Nowak, R. Wrzalik, M. Jesionek, P. Szperlich, R. Paszkiewicz, A. Guiseppi-Elie, Quantum effects in electrical conductivity and photoconductivity of single SbSI nanowire, Acta Physica Polonica A (2013), vol. 124, nr 5, s. 827-829, http://dx.doi.org/10.12693/APhysPolA.124.827

D. Pucicki, K. Bielak, R. Kudrawiec, D. Radziewicz, B. Ściana, Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap, Materials Science-Poland (2013), vol. 31, nr 4, s. 489-494 http://dx.doi.org/10.2478/s13536-013-0137-1

K. Rola, I. Zubel, Triton surfactant as an additive to KOH silicon etchant, Journal of Microelectromechanical Systems (2013), vol. 22, nr 6, s. 1373-1382, http://dx.doi.org/10.1109/JMEMS.2013.2262590

P. Kamyczek, P. Biegański, E. Popko, E. Zielony, Ł. Gelczuk, B. Ściana, D. Pucicki, D. Radziewicz, M. Tłaczała, K. Kopalko, M. Dąbrowska-Szata, Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE, Materials Science-Poland (2013), vol. 31, nr 4, s. 595-600, http://dx.doi.org/10.2478/s13536-013-0144-2

K. Rola, I. Zubel, Application of triton X-100 surfactant for silicon anisotropic etching in KOH-based solutions, Materials Science-Poland (2013), vol. 31, nr 4, s. 525-530, http://dx.doi.org/10.2478/S13536-013-0130-8

A. Szyszka, M. Wośko, B. Paszkiewicz, M. Tłaczała, Evaluation of AlGaN/GaN heterostructures properties by QMSA and AFM techniques, Materials Science-Poland (2013), vol. 31, nr 4, s. 543-547, http://dx.doi.org/10.2478/s13536-013-0135-3

W. Oleszkiewicz, J. Markowski, R. Srnánek, W. Kijaszek, J. Gryglewicz, J. Kováč, M. Tłaczała, Influence of RF ICP PECVD process parameters of diamond-like carbon films on DC bias and optical emission spectra, Optica Applicata (2013), vol. 43, nr 1, s. 109-115, http://dx.doi.org/10.5277/oa130114

L. Tarnawska, J. Dąbrowski, T. Grzela, M. Lehmann, T. Niermann, R. Paszkiewicz, P. Storck, T. Schroeder, Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: experiment and theory, Journal of Applied Physics (2013), vol. 113, nr 21, art. 213507, s. 1-10, http://dx.doi.org/10.1063/1.4807907

M. Hojko, D. Paszuk, B. Paszkiewicz, Measurements of AlGaN/GaN heterostructures for sensor applications, Optica Applicata (2013), vol. 43, nr 1, s. 35-38, http://www.if.pwr.wroc.pl/~optappl/pdf/2013/no1/optappl_4301p35.pdf

S. Kochowski, Ł. Drewniak, K. Nitsch, R. Paszkiewicz, B. Paszkiewicz, Analysis of MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs structure based on DLTS measurements, Materials Science-Poland (2013), vol. 31, nr 3, s. 446-453, http://dx.doi.org/10.2478/s13536-013-0124-6

A. Stafiniak, B. Boratyński, A. Baranowska-Korczyc, K. Fronc, D. Elbaum, R. Paszkiewicz, M. Tłaczała, Stability of ZnO nanofibers in processing liquid agents, Materials Science-Poland (2013), vol. 31, nr 3, s. 312-317, http://dx.doi.org/10.2478/s13536-013-0106-8

M. Wośko, B. Paszkiewicz, R. Paszkiewicz, M. Tłaczała, Influence of AlN spacer on the properties of AlGaN/AlN/GaN heterostructures, Optica Applicata (2013), vol. 43, nr 1, s. 61-66, http://www.if.pwr.wroc.pl/~optappl/pdf/2013/no1/optappl_4301p61.pdf

R. Korbutowicz, J. Wnęk, P. Panachida, J. Serafińczuk, R. Srnánek, Gallium oxide buffer layers for gallium nitride epitaxy, Optica Applicata (2013), vol. 43, nr 1, s. 73-79, http://dx.doi.org/10.5277/oa130110

L. Stuchlíková, L. Harmatha, M. Petrus, J. Rybár, J. Šebok, B. Ściana, D. Radziewicz, D. Pucicki, M. Tłaczała, A. Kósa, P. Benko, J. Kováč, P. Juhász, Electrical characterization of the AIIIBV-N heterostructures by capacitance methods, Applied Surface Science (2013), vol. 269, s. 175-179, http://dx.doi.org/10.1016/j.apsusc.2012.09.108

W. Macherzyński, K. Indykiewicz, B. Paszkiewicz, Chemical analysis of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures, Optica Applicata (2013), vol. 43, nr 1, s. 67-72, http://www.if.pwr.wroc.pl/~optappl/pdf/2013/no1/optappl_4301p67.pdf 

J. Gryglewicz, A. Stafiniak, M. Wośko, J. Prażmowska-Czajka, B. Paszkiewicz, Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures, Optica Applicata (2013), vol. 43, nr 1, s. 27-33, http://www.if.pwr.wroc.pl/~optappl/pdf/2013/no1/optappl_4301p27.pdf

R. Kinder, M. Mikolášek, D. Donoval, J. Kováč, M. Tłaczała, Measurement system with Hall and a four point probes for characterization of semiconductors, Journal of Electrical Engineering-Elektrotechnický Časopis (2013), vol. 64, nr 2, s. 106-111, http://dx.doi.org/10.2478/jeec-2012-0015

K. Rola, I. Zubel, Impact of alcohol additives concentration on etch rate and surface morphology of (100) and (110) Si substrates etched in KOH solutions, Microsystem Technologies: Micro- and Nanosystems - Information Storage and Processing Systems (2013), vol. 19, nr 4, s. 635-643, http://dx.doi.org/10.1007/s00542-012-1675-x

K. Indykiewicz, M. Hajłasz, B. Paszkiewicz, The new method of fabrication of submicron structures by optical lithography with mask shifting and mask rotation, Central European Journal of Physics (2013), vol. 11, nr 2, s. 219-225, http://link.springer.com/content/pdf/10.2478%2Fs11534-012-0166-0

M. Badura, B. Ściana, D. Radziewicz, D. Pucicki, K. Bielak, W. Dawidowski, P. Kamyczek, E. Płaczek-Popko, M. Tłaczała, Characterisation of AP-MOVPE grown (Ga, In)(N, As) structures by Raman spectroscopy, Proc. SPIE 8902, Electron Technology Conference 2013, 89022Q, http://dx.doi.org/10.1117/12.2031297 

W. Dawidowski, B. Ściana, M. Latkowska, D. Radziewicz, D. Pucicki, K. Bielak, M. Badura, M. Tłaczała, Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells, Proc. SPIE 8902, Electron Technology Conference 2013, 89022G (25 July 2013), doi: http://dx.doi.org/10.1117/12.2031065 

K. Bielak, D. Pucicki, B. Ściana, D. Radziewicz, W. Dawidowski, M. Badura, R. Kudrawiec, J. Serafińczuk, M. Tłaczała, Characterizations of GaInNAs/GaAs quantum wells, Proc. SPIE 8902, Electron Technology Conference 2013, 89022R (25 July 2013), doi: http://dx.doi.org/10.1117/12.2031298 

Ł. Gelczuk, M. Dąbrowska-Szata, P. Kamyczek, E. Płaczek-Popko, K. Kopalko, B. Ściana, D. Pucicki, D. Radziewicz, M. Tłaczała, Investigation of deep-level defects in InGaAsN/GaAs 3xQWs structures grown by AP-MOVPE, Proc. SPIE 8902, Electron Technology Conference 2013, 89020F (25 July 2013), doi: http://dx.doi.org/10.1117/12.2030760 

I. Zborowska-Lindert, B. Ściana, D. Pucicki, D. Radziewicz, M. Panek, B. Boratyński, A. Stafiniak, M. Ramiączek-Krasowska, M. Tłaczała, Surface passivation of MSM photodetectors made on GaAsN epitaxial layers, Proc. SPIE 8902, Electron Technology Conference 2013, 89020I (25 July 2013), doi: http://dx.doi.org/10.1117/12.2031054 

B. Ściana, D. Radziewicz, D. Pucicki, J. Serafińczuk, W. Dawidowski, K. Bielak, M. Badura, Ł. Gelczuk, M. Tłaczała, M. Latkowska, P. Kamyczek, J. Kováč, M. Florovič, A. Vincze, Influence of the AP MOVPE process parameters on properties of (In, Ga)(As, N)/ GaAs heterostructures for photovoltaic applications, Proc. SPIE 8902, Electron Technology Conference 2013, 89020J (25 July 2013), doi: http://dx.doi.org/10.1117/12.2031055 

L. Tarnawska, P. Zaumseil, M. Schubert, S. Okur, U. Ozgur, H. Morkoç, R. Paszkiewicz, P. Storck, T. Schroeder, Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111), Journal of Applied Physics (2012), vol. 111, nr 7, s. 073509-1 - 073509-4, http://dx.doi.org/10.1063/1.3699201

W. Macherzyński, B. Paszkiewicz, A. Vincze, R. Paszkiewicz, M. Tłaczała, J. Kováč, Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au matallization to n-type AlGaN/GaN heterostructures, Materials Science-Poland (2012), vol. 30, nr 4, s. 342-347, http://dx.doi.org/10.2478/s13536-012-0051-y

D. Paszuk, K. Tchoń, Z. Pietrowska, Motion planning of the trident snake robot equipped with passive or active wheels, Bulletin of the Polish Academy of Sciences. Technical Sciences (2012), vol. 60, nr 3, s. 547-554, http://dx.doi.org/10.2478/v10175-012-0067-9

A. Stafiniak, B. Boratyński, A. Baranowska-Korczyc, W. Macherzyński, K. Fronc, R. Paszkiewicz, M. Tłaczała, D. Elbaum, Technology of ZnO nanofibers based devices, Materials Science and Engineering. B, Advanced Functional Solid-State Materials (2012), vol. 177, nr 15, s. 1299-1303, http://dx.doi.org/10.1016/j.mseb.2012.03.013

I. Zubel, F. Granek, K. Rola, K. Banaszczyk, Texturization of Si(1 0 0) substrates using tensioactive compounds, Applied Surface Science (2012), vol. 258, nr 22, s. 9067-9072, http://dx.doi.org/10.1016/j.apsusc.2012.05.164

I. Zubel, M. Kramkowska, K. Rola, Silicon anisotropic etching in TMAH solutions containing alcohol and surfactant additives, Sensors and Actuators. A, Physical (2012), vol. 178, s. 126-135, http://dx.doi.org/10.1016/j.sna.2012.02.018

B. Ściana, D. Radziewicz, D. Pucicki, I. Zborowska-Lindert, J. Serafińczuk, M. Tłaczała, M. Latkowska-Baranowska, J. Kováč, R. Srnánek, MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications, Crystal Research and Technology (2012), vol. 47, nr 3, s. 313-320, http://dx.doi.org/10.1002/crat.201100415